99.99%-99.9999%Indium ingot 4N,5N,6N Indium bar

Share on:


Price:
Price in USD:Details

Quantity:


Product Overview

Description


Indium (In) 


1,Pure :99.99% - 99.9999%;


2,Technic:Electrolysis-Vacuum smelting:removal of low melting point impurities.(Sn,S,Se,Pb,Cd,As,Hg,P );


3,Analysis :ICP-MS or GDMS (5N:All impurity elements is below 10ppm)


4,Size : ; Ingot ;Granule ,Powder 


5,Service :Supply MSDS ,Free sample; Provide Solutions for Material Application.


6, Physical character: 


Atomic Weight: 114.818


Electronegative: 1.78


Density: ρ=7.31 g/cm3 (0-100℃)


Melting Point: 156.5985 ℃ 


Boiling Point: 2072 ℃ 


7, Specification: 


High Purity Indium: 


In-04 Grade 99.99. The content of Indium is above 99.99%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 100 ppm; 


In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm; 


Ultra Purity Indium:


In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm; 


Ultra High Purity Indium:


In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm; 


8, Physical Size: 


bar, Ingot, Granule.


9, Usage: 


It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.


10, packing: 


It is packed with Dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampuleCapture.JPG


0.0109 s.