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Name | Monocrystalline Silicon Ingot Price Silicon Ingot |
Growth Method | CZ |
Port | Shanghai or Hongkong |
Size | 3"/4"/5"/6"/8'' |
Type | N-type/P-type |
Orientation | <111>/<100> |
Dopant | P-type:Boron. N-type:Phos./As./Sb. |
Diameter | 76.2±0.3mm /100±0.4mm / 125±0.5mm / 150±0.5mm / 200±0.5mm |
Oxygen Content | ≤18 New PPMA |
Carborn Content | ≤1New PPMA |
Grade | 9N (99.9999999%) |