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Base Material | InGaP/GaAs/InGaAs |
Cell Area/cm2 | 4-30(Customizable) |
Surface Density/ g/m2 | 190 |
Minimum Bending Radius/mm | 15 |
Average Open Circuit Voc/V | 3.0 |
Average Short Circuit Jsc /mA | Customizable |
Average Efficiency /η | 30% |
Weight-power Ratio/W/kg | 2200 |
Base Material | InGaP/GaAs/InGaAs |
Cell Area/cm2 | 12 |
Surface Density/ g/m2 | 200 |
Weight-power Ratio/W/kg | 2000 |
Average Efficiency /ηbare | 28% |
Module Density/ g/m2 | 500 |
Module Weight-power Ratio/W/kg | 800 |
Module Bending Radius/cm | 10 |
Dimension, output voltage, output current | Customizable |