16N60 600V 16A TO-220 n channel enhancement high voltage mosfet

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Product Overview

Description

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Product Details

General Description
The YR16N60 the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switchingperformance and enhance the avalanche  energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. which accords with the RoHS.

 

Features

  • VDS=600V;ID=16A@ VGS=10V;
    RDS(ON)<0.55Ω @ VGS=10V
  • Fast Switching
  • ESD Improved Capability
  • Low Reverse transfer capacitances(Typical:5.8pF)
  • 100% Single Pulse avalanche energy Test

Application

  • Power switch circuit of adaptor and charger.

Package Marking and Ordering Information

Device MarkingDeviceDevice PackageReel SizeTape widthQuantity
YR16N60YR16N60T0-220---

 

 

 

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

 Drain-Source Voltage (VGS=0V)

600

V

VGS

 Gate-Source Voltage (VDS=0V)

±30

V

ID(DC)

 Drain Current (DC) at Tc=25℃

16

A

ID(DC)

 Drain Current (DC) at Tc=100℃

       14

A

IDM(a1)

 Drain Current-Continuous@ Current-Pulsed

       64

A

dv/dt(a3)

 Peak Diode Recovery Voltage

5

V/ns

PD

 Maximum Power Dissipation(Tc=25℃)

163

W

 

 Derating Factor

1.3

W/℃

EAS(a2)

 Single Pulse Avalanche Energy

1470

Mj

TL

 MaximumTemperature for Soldering

300

TJ,TSTG

 Operating Junction and Storage Temperature Range

-55 To 150

 

  

Thermal Characteristic

SymbolParameterValueUnit
RθJCThermal Resistance,Junction-to-Case1.2℃/W
RθJAJunction-to-Ambient62℃/W
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