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Asymmetric thyristor Applications
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Blocking capabilty up to 2000 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATING
Blocking - Off State
VRRM (1) |
VDRM (1) |
VRSM (1) |
10 |
2400/2800 |
10 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
5 mA 40 mA (3) |
Critical rate of voltage rise (4) |
dV/dt |
1000 V/mse |
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
341 |
|
A |
Sinewave,180o conduction,Tc =85oC |
RMS value of on-state current |
ITRMS |
|
1040 |
|
A |
Nominal value |
Peak one cycle surge (non repetitive) current |
ITSM |
|
-
5700 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
1.5 |
|
KA2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.45 |
|
V |
ITM = 1000 A; Duty cycle £ 0.01%
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
2000 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
Contact Name |
John Chang & Sam Chow |
TEL |
+86-514-87782298,87782296 |
Fax |
+86-514-87782297,87367519 |
WEB |
yzpst.com;Pst888.com;yzpstcc.com;yzpst.net |