Gallium phosphide (GaP) single crystal substrate dia2 inches 0.3 thickness

Price:RUB 9,247.79 - RUB 12,330.39

Quantity:

8-11_02

Product Name:

Gallium phosphide (GaP) crystal substrate

Technical parameters:

Crystal structure	Cubic a = 5.4505 Å
Growth method	Czochralski method
Density	4.13 g / cm ³
Mp	1480 ^o C 1
Thermal expansion coefficient	5.3 x10 ^-6 / ^O C
Dopant	S-doped undoped
Direction	<111> or <100> <100> or <111>
Type	N N
Thermal Conductivity	2 ~ 8 x10 ¹⁷ / cm ³ 4 ~ 6 x10 ¹⁶ / cm ³
Resistivity W.cm	0.03 to 0.3
EPD (cm ^-2)	<3x10 ⁵ <3x10 ⁵

Specifications:

Crystallographic directions: <111>, <100> ± 0.5 ^o

Standard polished Size: Ø2 "* 0.35mm; Ø2" * 0.43mm. Ø3"x0.3mm

Note: according to customer requirements with special dimensions and orientation substrates

StandardPacking

1000 clean room, 100 clean bag or single box packaging

1 -

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