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Product properties | Attribute value |
Manufacturer: | Original Manufacturer |
Product Category: | Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor |
Transistor polarity: | N-Channel |
technology: | Si |
Vds-Drain-source breakdown voltage: | 28 V |
working frequency: | 945 MHz |
Gain: | 16 dB |
Output Power: | 150 W. |
Installation style: | Through Hole |
Types of: | RF Power MOSFET |
trademark: | Original Manufacturer |
Number of channels: | 1 Channel |
product type: | RF MOSFET Transistors |
subtype: | MOSFETs |
unit weight: | 2.400 g |



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