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RB-808B-190-10-4-SE | ||||||||||
Symbol | Min. | Typ. ①② | Max. | Unit | ||||||
Operation | ||||||||||
Center wavelength | λ | - | 808 | - | nm | |||||
Output power | Po | 9.5 | 11 | - | W | |||||
Operation mode | - | - | CW | - | - | |||||
Geometrical | ||||||||||
Emitter width | w | - | 190 | - | μm | |||||
Cavity length | L | - | 4000 | - | μm | |||||
Chip width | W | - | 500 | - | μm | |||||
Chip height | H | - | 150 | - | μm | |||||
Electro Optical Data | ||||||||||
Threshold current | Ith | - | 1.6 | - | A | |||||
Operating current | Iop | - | 10 | - | A | |||||
Operating voltage | Vop | - | 1.8 | - | V | |||||
Slope efficiency | ηd=Po/(Iop - Ith) | - | 1.2 | - | W/A | |||||
Total conversion efficiency | η=Po/(Iop x Vop) | 52 | 61 | - | % | |||||
Slow axis divergence③ | θ∥ | - | 10 | - | degrees | |||||
Fast axis divergence④ | θ⊥ | - | 39 | - | degrees | |||||
Spectral width④ | △λ | - | 2 | - | nm | |||||
Polarization | - | - | TM | - | - | |||||
①In the above table, the typical values of the test data are obtained according to the test system of Raybow Opto. ②According to the single emitter chip test data. The single-emitter Chip is tested in the form of COS (Chip On Submount) package, and the COS test temperature is 25℃. ③Full width at 95% of Power content; ④FWHM(Full width half maximum)。 | ||||||||||













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