OST50N65HSZF 650V Mosfet Power Transistor Transistor IGBT Inverter Board IGBT TO247

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Product Overview

Description



General Description
OST50N65HSZF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor
(TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching
performance. This device is suitable for mid to high range switching frequency converters.

Features
1.Advanced TGBTTM technology
2.Excellent conduction and switching loss
3.Excellent stability and uniformity
4.Fast and soft antiparallel diode

Applications
1.Induction converters
2.Uninterruptible power supplies



Specification




Oriental-Semi has launched IGBT products such as high speed series, low Vcesat series and RC series, covering 600V~1700V, which can be widely used in white goods, new energy inverter, automobile driver, etc.


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Green Product Declaration
To ensure that the products provided to customers can meet international and domestic laws and regulations and customers' requirements on Hazardous Substance Process Management, Oriental Semiconductor formulates measures for the control of harmful substances to ensure that the products are halogen-free, and to meet the harmful substances requirements of EU RoHS and REACH.


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0.0395 s.