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Type | P-type |
Growth method | CZ |
Orientation | <111>/<100> |
Dopant | P-type:Boron. |
Diameter | 200±0.5mm |
Oxygen Content | ≤18 New PPMA |
Carborn Content | ≤1New PPMA |
Grade | 9N (99.9999999%) |
Resistivity | ≥0.001Ω·cm |
Others | TTV≤10um, Bow≤35um,Warp≤35um |
Particles | ≥0.3um@≤10PPW |




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