China Professional Manufacture IC grade mono Low Resistance epitaxial silicon wafer with high quality

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Product Overview

Description



Product Description




Type
P-type
Growth method
CZ
Orientation
<111>/<100>
Dopant
P-type:Boron. 
Diameter
200±0.5mm
Oxygen Content
≤18 New PPMA
Carborn Content
≤1New PPMA
Grade
9N (99.9999999%)
Resistivity
≥0.001Ω·cm
Others
TTV≤10um, Bow≤35um,Warp≤35um
Particles
≥0.3um@≤10PPW




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FAQ




Q: Could I get samples?
 A: We can provide samples for you and welcome you to visit our factory any time.
 
Q: How about the shipping?
A: We will send the goods by International Express like SF, Fedex, UPS or according your requirement.
     Usually it takes 3 -5work days to arrive.
 
Q:When could you deliver the goods?
A: Within 4 weeks after your payment
 
Q:  What's your payment term?
A: T/T, 100% in advance.


0.3851 s.