4 Inch doped Sb 111 Orientation 0.014 0.01 Ohm Monocrystalline Silicon Ingot
4 Inch doped Sb 111 Orientation 0.014 -0.01 Ohm Monocrystalline Silicon Ingot
4 Inch doped Sb 111 Orientation 0.014 -0.01 Ohm Monocrystalline Silicon Ingot
4 Inch doped Sb 111 Orientation 0.014 -0.01 Ohm Monocrystalline Silicon Ingot
4 Inch doped Sb 111 Orientation 0.014 -0.01 Ohm Monocrystalline Silicon Ingot
4 Inch doped Sb 111 Orientation 0.014 -0.01 Ohm Monocrystalline Silicon Ingot
4 Inch doped Sb 111 Orientation 0.014 -0.01 Ohm Monocrystalline Silicon Ingot

4 Inch doped Sb 111 Orientation 0.014 0.01 Ohm Monocrystalline Silicon Ingot

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Product Overview

Description



Product Description




Specification


Size 
4‘'
Growth method
CZ
Diameter
100±0.4mm
Orientation
 <111>
Type
N-type
Dopant
 Sb.
Oxygen Content
≤18 New PPMA
Carborn Content
≤1New PPMA
Resistivity
0.001-0.01 Ω·cm
Length Limits
According to your requirement.
Others
No Lineage,Slip,Twinning,Cracks,or Dislocations
Price 
According to your specification,especially resistivity and length.


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