2 ' Low Resistivity P Type 111 Silicon Ingot
- Category: Silicon Ingots >>>
- Supplier: Shanghai Panmeng Electronic Materials Co. Ltd.
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Product Overview
Description
Product Description
Growth Method | CZ |
Port | Shanghai or Hongkong |
Size | 2" |
Type | P |
Orientation | <111> |
Dopant | Bo |
Diameter | 57-57.5 mm |
Purity | ≥11N(99.999999999%) |
Oxygen Content | ≤18 New PPMA |
Carborn Content | ≤1New PPMA |
Grade | 9N (99.9999999%) |
Resistivity | 0-1 ohm |
Others | According to your specification,especially resistivity and length. |
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FAQ
Q: Could I get samples?
A: We can provide samples for you and welcome you to visit our factory any time.
Q: How about the shipping?
A: We will send the goods by International Express like SF, Fedex, UPS or according your requirement.
Usually it takes 3 -5work days to arrive.
Q:When could you deliver the goods?
A: Within 4 weeks after your payment
Q: What's your payment term?
A: T/T, 100% in advance.
A: We can provide samples for you and welcome you to visit our factory any time.
Q: How about the shipping?
A: We will send the goods by International Express like SF, Fedex, UPS or according your requirement.
Usually it takes 3 -5work days to arrive.
Q:When could you deliver the goods?
A: Within 4 weeks after your payment
Q: What's your payment term?
A: T/T, 100% in advance.
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