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item | value |
Model Number | IPB083N10N3GATMA1 |
Type | MOSFET |
Place of Origin | China |
Brand Name | Original |
D/C | 2021 |
Package Type | TO-263-3 |
Supplier Type | Original manufacturer, ODM, Retailer |
Current - Collector (Ic) (Max) | Original |
Voltage - Collector Emitter Breakdown (Max) | Original |
Vce Saturation (Max) @ Ib, Ic | Original |
Current - Collector Cutoff (Max) | Original |
Operating Temperature | - 55 C~+ 175 C |
Mounting Type | SMD/SMT |
Current - Continuous Drain (Id) @ 25°C | Original |
Rds On (Max) @ Id, Vgs | Original |
Vgs(th) (Max) @ Id | Original |
Gate Charge (Qg) (Max) @ Vgs | Original |
Drive Voltage (Max Rds On, Min Rds On) | Original |
IGBT Type | Original |






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