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Product | Free-standing GaN Substrates (4") Un-doped |
型号 item | TGS-461UA-A2 / TGS -461UA-M3 |
尺寸 Size (mm) | φ100.0±1.0 |
厚度 Thickness (μm) | 400±50 |
总厚度变化 TTV (μm) | ≤30 |
弯曲度 BOW (μm) | ≤50 |
表面粗糙度 RMS (nm) | Ga face:RMS≤0.2nm (10μm×10μm); N face:Lapped and etched |
晶向 Orientation | C-plane(0001) off angle toward M-axis 0.3±0.25°; OR C-plane(0001) off angle toward A-axis 0.3±0.25° |
导电类型 Conduction Type | Un-doped |
电阻率 (300K) Resistivity (Ω·cm) | ≤0.05 |
载流子浓度 (300K) Carrier Concentration (cm -3) | ≤2×10 17 |
位错密度 Dislocation Density (cm -2) | ≤5×10 6 |
FWHM (arcsec) | ≤100 |
包装 Package | Packaged in individual containers in a class 100 clean room environment. |
Tel: | (+0086)13925883511 |
Wechat | 13925883511 |
Email | sales@thirdsemi.com |


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