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Parameter | Symbol | Min. | Typical | Max. | Unit |
Forward Current | IF | - | - | 1000 | mA |
Peak Forward Current Pulse Width≦100μs ,Duty≦1% | IFP | - | - | 1400 | mA |
Reverse Voltage | VR | - | - | 5 | V |
Power Dissipation at(or below) 25℃ Free Air Temperature | Pd | - | - | 2.3 | W |
Operating Temperature Range | Top | -40 | - | 85 | ℃ |
Storage Temperature Range | Tstg | -40 | - | 100 | ℃ |
Soldering Temperature | Tsol | - | - | 260 | ℃ |
Thermal Resistance(junction to case) | Rs | - | - | 12 | ℃/W |
Electrostatic Discharge(HBM) | ESD | - | - | 2000 | V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Condition | ||||||
Radiant Intensity | Ie | 120 | 160 | 240 | mW/sr | IF=1A, tP=10ms | ||||||
- | ||||||||||||
Forward Voltage | VF | 1.7 | 1.95 | 2.3 | V | IF=1A, tP=10ms | ||||||
Peak Wavelength | λp | - | 820 | - | nm | IF=1A, tP=10ms | ||||||
Centroid Wavelength | λ centroid | - | 815 | - | nm | IF=1A, tP=10ms | ||||||
Spectral Half-width | △λ | - | 25 | - | nm | IF=1A, tP=10ms | ||||||
Viewing Angle | 2θ1/2 | - | 120 | - | deg | IF=1000mA | ||||||
Dimensions of active chip area L x W(Typ.) | 1066x1066 | um x um | ||||||||||
Reverse Current | IR | - | - | 5 | uA | VR =5V | ||||||
Notes: 1, Tolerance of Radiant Intensity: ±10% 2, Tolerance of Forward Voltage: ± 0.1V | ||||||||||||







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