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Name | IC 3Inch Mono Silicon Ingot, Monocrystalline Silicon Ingot |
Growth Method | CZ |
Port | Shanghai or Hongkong |
Size | 3" |
Type | N-type/P-type |
Orientation | <111>/<100> |
Dopant | P-type:Boron. N-type:Phos./As./Sb. |
Diameter | 76.2±0.3mm |
Purity | 11N(99.999999999%) |
Oxygen Content | ≤18 New PPMA |
Carborn Content | ≤1New PPMA |
Grade | 9N (99.9999999%) |
Others | No lineage,slip,twinning and dislocations |
Price | According to your specification,especially resistivity and length. |





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