3 Inch 0.003 0.005 ohm Resistivity Doped As Semiconductors Monocrystalline Silicon Ingot

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Product Overview

Description



Product Description




Name
IC 3Inch Mono Silicon Ingot, Monocrystalline Silicon Ingot
Growth Method
CZ
Port
Shanghai or Hongkong
Size
3"
Type
N-type
Orientation
<100>
Dopant
As.
Diameter
76.2±0.3mm 
Purity
11N(99.999999999%)
Oxygen Content
≤18 New PPMA
Carborn Content
≤1New PPMA
Resistivity
0.003- 00.005 ohm
Grade
9N (99.9999999%)
Others
No lineage,slip,twinning and dislocations
Price
According to your specification,especially resistivity and length.




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0.2121 s.