76.2 mm Doped As 0.003 0.005 Ohm Low Resistivity Semiconductor Material Monocrystalline Silicon Ingot

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Product Overview

Description



Product Description




Growth Method
CZ
Size
3"
Orientation
100
Dopant
N-type:As.
Diameter
76.2±0.3mm 
Purity
11N(99.999999999%)
Oxygen Content
≤18 New PPMA
Carborn Content
≤1New PPMA
Others
No Lineage,Slip,Twinning,Cracks,or Dislocations
Price
According to your specification,especially resistivity and length.




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0.1925 s.