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4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
Stacking Sequence | ABCB | ABCACB |
Mohs Hardness | ≈9.2 | ≈9.2 |
Density | 3.21 g/cm3 | 3.21 g/cm3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
Dielectric Constant | c~9.66 | c~9.66 |
Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
Band-gap | 3.23 eV | 3.02 eV |
Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | |||
Diameter | 100. mm±0.2 mm or other customized size | ||||||
Thickness | 1000±25 um Or other customized thickness | ||||||
Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | ||||||
Micropipe Density | ≤0 cm-2 | ≤2 cm-2 | ≤5 cm-2 | ≤30 cm-2 | |||
Resistivity 4H-N | 0.015~0.028 Ω•cm | ||||||
Resistivity 4/6H-SI | ≥1E7 Ω·cm | ||||||
Primary Flat | {10-10}±5.0° or round shape | ||||||
Primary Flat Length | 18.5 mm±2.0 mm or round shape | ||||||
Secondary Flat Length | 10.0mm±2.0 mm | ||||||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||||
Edge exclusion | 1 mm | ||||||
TTV/Bow /Warp | ≤10μm /≤10μm /≤15μm | ||||||
Roughness | Polish Ra≤1 nm / CMP Ra≤0.5 nm | ||||||
Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | ||||
Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||
Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | ||||
Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | ||||
edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each |
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