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Product Attribute | Attribute Value |
Manufacturer: | Infineon |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 4.2 A |
Rds On - Drain-Source Resistance: | 45 mOhms |
Vgs - Gate-Source Voltage: | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
Qg - Gate Charge: | 12 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.3 W |
Channel Mode: | Enhancement |
Brand: | Infineon / IR |
Configuration: | Single |
Height: | 1.1 mm |
Length: | 2.9 mm |
Product Type: | MOSFET |
Factory Pack Quantity: | 6000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Brand Agency | ||||||||
ALTERA | XILINX | Maxim Integrated | Texas Instruments | STMicroelectronics | ||||
Nexperia | Texas Instruments | Murata | Samsung | Yageo | ||||










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