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Resistivity(ohm.cm) | ||
Growth Method | VGF | |
Conduct Type | S-C-N | |
Dopant | GaAs-Si | |
Orientation | (100)15°±0.5° Off Toward<111>A | |
Orientation Angle | EJ[0-1-1]±0.5° | |
OF Length (mm) | 17±1 | |
IF Orientation | EJ[0-11]±0.5° | |
IF Length(mm) | 7±1 | |
Diameter(mm) | 50.8±0.2 | |
CC(/c.c.) | 0.4E18~1E18 | |
Resistivity(ohm.cm) | N/A | |
Mobility(cm2/v.s) | ≥1000 | |
EPD(/cm2) | ≤5000 | |
Thickness(um) | 350±20 | |
TTV(um) | <10 | |
TTR(um) | <10 | |
Bow(um) | <15 | |
Warp(um) | <15 | |
Surface | Side1:Polished Side2:Etched | |
Packaging | Cassette or single | |





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