Share on:
silicon wafer | ||||||||
Diameter | 4" | |||||||
Grade | Prime | |||||||
Growth Method | CZ | |||||||
Orientation | <1-0-0>,<1-1-1>,<1-1-0> | |||||||
Type/Dopant | P Type/Boron,N Type/Phos,N Type/As, N Type/Sb | |||||||
Thickness(μm) | 279/380/525/625/675/725/775 | |||||||
Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm | |||||||
Resistivity | 0.001-100 ohm-cm | |||||||
Surface Finished | P/E,P/P,E/E,G/G | |||||||
TTV(μm) | Standard <10 um,Maximum Capabilities<5 um | |||||||
Bow/Warp | Standard <40 um,Maximum Capabilities<20 um | |||||||
Particle |