Share on:
1inch Aluminum nitride single crystal substrate | ||||||
Crystal Specifications | Parameter value | |||||
Diameter(mm) | 25.4±0.5 | |||||
Thickness(μm) | 400±50 | |||||
Crystal Form | 2H | |||||
Polytype | {0001}±0.5° | |||||
Surface polishing | Aluminum surface: chemical polishing (double polishing can be customized) | |||||
Roughness | Al face:≤0.5nm N face(back):≤1.2μm | |||||
appearance | Circular belt positioning edge | |||||
Quality grade | S grade(Super) | P grade(Prouduction) | R grade(Research) | |||
HRXRD Half height width@{0002}(arcsec) | ≤150 | ≤300 | ≤500 | |||
HRXRD Half height width@{10-12}(arcsec) | ≤100 | ≤200 | ≤400 | |||
absorption coefficient@265nm(cm-1) | ≤50 | ≤70 | ≤100 | |||
Edge Exclusion(mm) | 1 | 1 | 1 | |||
Indents | / | / | / | |||
Chips | / | / | ≤3 Cumulative ≤1.0mm | |||
TUA | ≥90% | |||||
Main positioning edge | {10-10}±5。0° | |||||
Orientation of secondary locating surface | Al face:Rotate clockwise in the direction of the main positioning edge90°±5° N face:Rotate counterclockwise in the direction of the main positioning edge90°±5° | |||||
TTV(μm) | ≤30 | |||||
Warp(μm) | ≤30 | |||||
Bow(μm) | ≤30 | |||||
Cracks | No, naked eye, strong light | |||||
Contamination | No, naked eye, radiation | |||||
Laser coding | N face,Parallel to the main locating edge | |||||
Package | Monolithic wafer box |