High purity semi insulated silicon carbide wafer with SiC substrate for scientific research of 5G communication RF devices
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- Supplier: Hefei Single Crystal Material Technology Co. Ltd.
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Product Overview
Description
Silicon Carbide (SiC) Substrates for Power Electronics Description
The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and
high-frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices. The key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation, and increased bandwidth capability. At the system level, this results in highly compact solutions with vastly improved energy efficiency at reduced cost. The rapidly growing list of current and projected commercial applications utilizing SiC technologies includes switching power supplies, inverters for solar and windmill energy generation, industrial motor drives, HEV and EV vehicles, and smart-grid power switching.
high-frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices. The key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation, and increased bandwidth capability. At the system level, this results in highly compact solutions with vastly improved energy efficiency at reduced cost. The rapidly growing list of current and projected commercial applications utilizing SiC technologies includes switching power supplies, inverters for solar and windmill energy generation, industrial motor drives, HEV and EV vehicles, and smart-grid power switching.
Polytype | 6H-SiC | 4H-SiC |
Crystal stacking sequence | ABCABC | ABCB |
Lattice parameter | a=3.073A , c=15.117A | a=3.076A , c=10.053A |
Band-gap | 3.02 eV | 3.27 eV |
Dielectric constant | 9.66 | 9.6 |
Refraction Index | n0 =2.707 , ne =2.755 | n0 =2.719 ne =2.777 |
Transmission range, μm | 0.12-7 |
Silicon Carbide Wafer Specification | ||
Polytype | 4H / 6H | |
Diameter | Ø 2″ / Ø 3″ / Ø 4″/Φ6″/Φ8″ | |
Thickness | 330 um ~ 350 um | |
Orientation | On axis <0001> / Off axis <0001> off 4° | |
Conductivity | N – type / Semi-insulating | |
Dopant | N2 ( Nitrogen ) / V ( Vanadium ) | |
Resistivity ( 4H-N ) | 0.015 ~ 0.03 ohm-cm | |
Resistivity ( 6H-N ) | 0.02 ~ 0.1 ohm-cm | |
Resistivity ( SI ) | > 1E5 ohm-cm | |
Surface | CMP polished | |
TTV | ≤ 15 um | |
Bow / Warp | ≤ 25 um | |
Grade | Production grade / Research grade | |
Declaration:
The price showing here only for your reference, it may not the final actual transaction price,due to raw material
costs and exchange rate change frequently, also your requirements(includes but is not limited to the specification, model,
workmanship,quantity per time, quality requirements,customized service) different to this product information.
costs and exchange rate change frequently, also your requirements(includes but is not limited to the specification, model,
workmanship,quantity per time, quality requirements,customized service) different to this product information.
Hefei Single Crystal Material Technology Co., Ltd. covers an area of 1500 square meters, specializing in crystal business for more than 40 years. Is a collection of single crystal substrate, sputtering target research and development, production, sales and technical services as one of the diversified high-tech enterprises.
The company has a strong processing research and development team, which is a senior crystal processing experience team led by the Anguo Institute of the Chinese Academy of Sciences. At present, the team has 43 people, including 19 doctoral researchers. The research and development of the growth, orientation, cutting, grinding and polishing of single crystal substrates has been well received by customers.
The company has a strong processing research and development team, which is a senior crystal processing experience team led by the Anguo Institute of the Chinese Academy of Sciences. At present, the team has 43 people, including 19 doctoral researchers. The research and development of the growth, orientation, cutting, grinding and polishing of single crystal substrates has been well received by customers.
We have more than 40 years of experience in crystal processing
We have more than 40 years of experience in crystal processing. From raw materials to crystal growth to
crystal processing,quality testing and crystal characterization testing, with a complete production line and
testing equipment, we can customize and tailor high quality substrate, ceramic substrate and various
semiconductor materials according to customer needs
crystal processing,quality testing and crystal characterization testing, with a complete production line and
testing equipment, we can customize and tailor high quality substrate, ceramic substrate and various
semiconductor materials according to customer needs
To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient packaging services will be provided.
Q: Are you trading company or manufacturer ?
A: We are factory.
Q: How long is your delivery time?
A: Generally it is 3~7 days if the goods are in stock. or it is 15-20 days if the goods are not in stock, it is according to
quantity.
Q: Do you provide samples ? is it free or extra ?
A: Yes, we could offer the sample ,but we need to take the sample fee .
Q: What is your terms of payment ?
A: Payment<=1000USD, 100% in advance. Payment>=1000USD, 30% T/T in advance ,balance before shippment.
A: We are factory.
Q: How long is your delivery time?
A: Generally it is 3~7 days if the goods are in stock. or it is 15-20 days if the goods are not in stock, it is according to
quantity.
Q: Do you provide samples ? is it free or extra ?
A: Yes, we could offer the sample ,but we need to take the sample fee .
Q: What is your terms of payment ?
A: Payment<=1000USD, 100% in advance. Payment>=1000USD, 30% T/T in advance ,balance before shippment.
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