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  • 1 6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N
1 6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N
1-6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N
1-6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N
1-6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N
1-6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N
1-6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N
1-6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N

1 6 inch high purity zone melting inherently undoped high resistance semiconductor grade IC monocrystalline silicon wafer 11N

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Price:$3.00 - $10.00

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Product Overview

Description







CZ Single Crystal Silicon Wafer Description
CZ Single Crystal Silicon Wafer is sliced from single crystal silicon ingot pulled by Czochralski CZ growth method, which is most widely used for silicon crystal growth of large cylindrical ingots used in the electronics industry to make semiconductor devices. In this process, a slim seed of crystal silicon with precise orientation tolerances is introduced into the molten bath of silicon whose temperature is precisely controlled. The seed crystal is slowly pulled upwards from the melt at a very controlled rate, the crystalline solidification of atoms from a liquid phase occurs at an interface, the seed crystal and the crucible are rotated in opposite directions during this withdrawal process, creating a large single crystal silicon with the seed’s perfect crystalline structure.
Thanks to the magnetic field applied to the standard CZ ingot pulling, Magnetic-field-induced Czochralski MCZ single crystal silicon is of comparatively lower impurity concentration, lower oxygen level and dislocation, and uniform resistivity variation which performs well in high technology electronic components and devices fabrication in electronic or photovoltaic industries.


Specifications
Symbol
Si
Atomic Number
14
Atomic Weight
28.09
Element Category
Metalloid
Group, Period, Block
14, 3, P
Crystal structure
Diamond
Color
Dark gray
Melting Point
1414°C, 1687.15 K
Boiling Point
3265°C, 3538.15 K
Density at 300K
2.329 g/cm3
Intrinsic resistivity
3.2E5 Ω-cm


No.
Items
Standard Specification
1
Size
2"
3"
4"
6"
8"
12"
2
Diameter mm
50.8±0.3
76.2±0.3
100±0.5
150±0.5
200±0.5
300±0.5
3
Conductivity
P or N or un-doped
4
Orientation
<100>, <110>, <111>
5
Thickness μm
279, 381, 425, 525, 575, 625, 675, 725 or as required
6
Resistivity Ω-cm
≤0.005, 0.005-1, 1-10, 10-20, 20-100, 100-300 etc
7
RRV max
8%, 10%, 12%
8
Primary Flat/Length mm
As SEMI standard or as required
9
Secondary Flat/Length mm
As SEMI standard or as required
10
TTV μm max
10
10
10
10
10
10
11
Bow & Warp μm max
30
30
30
30
30
30
12
Surface Finish
As-cut, L/L, P/E, P/P
13
Packing
Foam box or cassette inside, carton box outside.


Declaration:
The price showing here only for your reference, it may not the final actual transaction price,due to raw material
costs and exchange rate change frequently, also your requirements(includes but is not limited to the specification, model,
workmanship,quantity per time, quality requirements,customized service) different to this product information.
















Hefei Single Crystal Material Technology Co., Ltd. covers an area of 1500 square meters, specializing in crystal business for more than 40 years. Is a collection of single crystal substrate, sputtering target research and development, production, sales and technical services as one of the diversified high-tech enterprises.
The company has a strong processing research and development team, which is a senior crystal processing experience team led by the Anguo Institute of the Chinese Academy of Sciences. At present, the team has 43 people, including 19 doctoral researchers. The research and development of the growth, orientation, cutting, grinding and polishing of single crystal substrates has been well received by customers.






We have more than 40 years of experience in crystal processing
We have more than 40 years of experience in crystal processing. From raw materials to crystal growth to
crystal processing,quality testing and crystal characterization testing, with a complete production line and
testing equipment, we can customize and tailor high quality substrate, ceramic substrate and various
semiconductor materials according to customer needs








To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient packaging services will be provided.










Q: Are you trading company or manufacturer ?
A: We are factory.

Q: How long is your delivery time?
A: Generally it is 3~7 days if the goods are in stock. or it is 15-20 days if the goods are not in stock, it is according to
quantity.

Q: Do you provide samples ? is it free or extra ?
A: Yes, we could offer the sample ,but we need to take the sample fee .

Q: What is your terms of payment ?
A: Payment<=1000USD, 100% in advance. Payment>=1000USD, 30% T/T in advance ,balance before shippment.






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