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Product attributes | Attribute value |
manufacturer: | Nexperia |
Product category : | MOSFET |
technology: | Si |
Installation style: | SMD/SMT |
Packaging/Box: | LFPAK-33-8 |
Transistor polarity: | N-Channel |
Channel: | 1 Channel |
Vds - drain source breakdown voltage: | 40 V |
Id - Continuous drain current: | 50 A |
Rds On - Leakage Source Conduction Resistance: | 6 mOhms |
Vgs - gate source voltage: | - 20 V, + 20 V |
Vgs th gate source threshold voltage: | 2.4 V |
Qg gate charge: | 28 nC |
Minimum operating temperature: | - 55 C |
Maximum operating temperature: | + 175 C |
Pd - Power dissipation: | 70 W |
Channel Mode: | Enhancement |
qualification: | AEC-Q101 |
package: | Reel |
trademark: | Nexperia |
configuration: | Single |
fall time: | 6.6 ns |
product type: | MOSFET |
rise time: | 6.4 ns |
Factory packaging quantity : | 1500 |
subcategory: | MOSFETs |
Transistor type: | 1 N-Channel |
Typical shutdown delay time: | 14 ns |
Typical connection delay time: | 7.7 ns |
Part Number Alias: | 9.34661E+11 |
unit weight: | 100.200 mg |








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