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Product Category | IGBT Modules |
Product | IGBT Silicon Modules |
Configuration | Dual |
Maximum Collector-Emitter Voltage VCEO | 1.2 kV |
Collector-emitter saturation voltage | 1.7 V |
Continuous collector current at 25 C | 580 A |
Gate-emitter drain current | 400 nA |
Pd-power dissipation | 2000 W |
Package / Case | 62 mm |
Minimum operating temperature | - 40 C |
Maximum operating temperature | + 125 C |
Package | Tray |
Height | 30.9 mm |
Length | 106.4 mm |
Maximum gate/emitter voltage | 20 V |
Mounting Style | Chassis Mount |
Product Type | IGBT Modules |
Series | IGBT3 - T3 |
Subcategory | IGBTs |
Technology | Si |
Width | 61.4 mm |
Part Number Alias | SP000100791 FF400R12KT3HOSA1 |
Unit weight | 337 g |
Buyer Reading 1.Shipped within 3-7 workdays after payment . 2. We are not responsible for any accidents , delay or other issues of shipment . 3. Any import fee should paid by buyer . 4. if you are satisfied our items and service , welcome to leave your active feedback . |
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