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Recrystallized SiC | Sintered SiC | Reaction Bonded SiC | |
Purity of Silicon Carbide | 99.5% | 98% | >88% |
Max. Working Temp. (`C) | 1650 | 1550 | 1300 |
Bulk Density (g/cm3) | 2.7 | 3.1 | >3 |
Appearance Porosity | <15%> | 2.5 | 0.1 |
Flexural strength (MPa) | 110 | 400 | 380 |
Compressive strength (MPa) | >300 | 2200 | 2100 |
Thermal expansion (10^-6/`C) | 4.6 (1200`C) | 4.0 (<500> | 4.4 (<500> |
Thermal conductivity (W/m.K) | 35~36 | 110 | 65 |
Main characteristics | High temp. High resistance. High purity | Fracture Toughness | Chemical Resistance |





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