Hot Pressed Aluminum Nitride Ceramic Black Wafer

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Product Overview

Description






Hot Pressed Aluminum Nitride Ceramic Black Wafer

Hot pressed alumiunm nitride is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity.The application for hot pressed AlN typically involve rigorous or abrasive environments and high-tempreature thermal cycling.

Application:
--Semiconductor Heaters
--Etching Machine


Below is the properties of the pressed alumina nitride.


Property
Units
Value
Flexural Strength, MOR (20 °C)
MPa
300-460
Fracture Toughness
MPa m1/2
2.75-6.0
Thermal Conductivity (20 °C)
W/m K
80-140
Coefficient of Thermal Expansion

1 x 10-6/°C
3.3-5.5
Maximum Use Temperature
°C
800
Dielectric Strength (6.35mm)
ac-kV/mm
16.0-19.7
Dielectric Loss
1MHz, 25 °C
1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C)
Ω-cm
1013 to 1014
















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