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RB- 1550A-190-50-2-TO9-S1 | ||||||||||
Absolute Maximum Ratings | ||||||||||
Parameter | Symbol | Values | Unit | |||||||
Operation Current | I op | 55 | A | |||||||
Reverse Voltage | Vr | 50 | V | |||||||
Pulsed Duration | P w | 200 | ns | |||||||
Duty Ratio | D R | 0.1 | % | |||||||
Operation Temperature | T op | -40~85 | ℃ | |||||||
Storage Temperature | T stg | -50~75 | ℃ | |||||||
Soldering Temperature | T s | ≤260 | ℃ | |||||||
Characteristics (I op =50 A, P w =200 ns, f=5 kHz, D R =0.1 %, T op =25) | ||||||||||
Parameter | Symbol | Min. | Typ. ①② | Max. | Unit | |||||
Wavelength | ||||||||||
Peak Emission Wavelength | λ op | 1530 | 1550 | 1570 | nm | |||||
Spectral Bandwidth | BW | 15 | nm | |||||||
Wavelenth Temperature Coefficient | Δλ/ΔT | 0.55 | nm/℃ | |||||||
Electro Optical Data | ||||||||||
Operation Power | P op | - | 50 | - | W | |||||
Operation Current | I op | 55 | A | |||||||
Threhold Current | I th | 1 | A | |||||||
Operation Voltage | V op | 40 | V | |||||||
Beam Divergence Angle Width (Horizontal) | θ ∥ | 11 | degrees | |||||||
Beam Divergence Angle Width (Vertical) | θ ⊥ | 8 | degrees | |||||||
Beam Pointing Angle (Horizontal) | θ ∥ ,p | -2 | 0 | +2 | degrees | |||||
Beam Pointing Angle (Vertical) | θ ⊥ ,p | -2 | 0 | +2 | degrees | |||||
Geometrical | ||||||||||
Optical Aperture Size ① | w x h | 190 x 10 | μm 2 | |||||||
①In the above table, the typical values of the test data are obtained according to the test system of Raybow Opto. ②According to the single emitter chip test data. The single-emitter Chip is tested in the form of COS (Chip On Submount) package, and the COS test temperature is 25℃. ③Full width at 95% of Power content; ④FWHM(Full width half maximum)。 | ||||||||||










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