Sharpening whetstone raw materials green silicon carbide f400 f500 f600

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Sharpening whetstone raw materials green silicon carbide f400 f500 f600

Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.

Particle Size	Particle Distribution (µm)
	Maximum Particle Size	Particle Size at d03	Particle Size at d50	Particle Size at d94
# 240	≤ 127	≤ 103	58.6 ± 3.0	≥ 40.0
# 280	≤ 112	≤ 87.0	49.4 ± 3.0	≥ 33.0
# 320	≤ 98.0	≤ 74.0	41.1 ± 2.5	≥ 27.0
# 360	≤ 86.0	≤ 66.0	36.1 ± 2.0	≥ 23.0
# 400	≤ 75.0	≤ 58.0	30.9 ± 2.0	≥ 20.0
# 500	≤ 63.0	≤ 50.0	26.4 ± 2.0	≥ 16.0
# 600	≤ 53.0	≤ 43.0	21.1 ± 1.5	≥ 13.0
# 700	≤ 45.0	≤ 37.0	17.9 ± 1.3	≥ 11.0
# 800	≤ 38.0	≤ 31.0	14.7 ± 1.0	≥ 9.00
# 1000	≤ 32.0	≤ 27.0	11.9 ± 1.0	≥ 7.00
# 1200	≤ 27.0	≤ 23.0	9.90 ± 0.80	≥ 5.50
# 1500	≤ 23.0	≤ 20.0	8.40 ± 0.60	≥ 4.50
# 2000	≤ 19.0	≤ 17.0	6.90 ± 0.60	≥ 4.00
# 2500	≤ 16.0	≤ 14.0	5.60 ± 0.50	≥ 3.00
# 3000	≤ 13.0	≤ 11.0	4.00 ± 0.50	≥ 2.00
# 4000	≤ 11.0	≤ 8.00	3.00 ± 0.40	≥ 1.30
# 6000	≤ 8.00	≤ 5.00	2.00 ± 0.40	≥ 0.80
# 8000	≤ 6.00	≤ 3.50	1.20 ± 0.30	≥ 0.60(1)
# 10000			0.51~0.70

 

Green silicon carbide application:

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