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MJ5516 CDS Sensor Specification
1. Product outline
(1) Use: According to photoelectric control principle, along with outside optical fiber change, to product The active status carries on the automatic control.
(2) Performance: A,Coated with epoxy B , Quick response C.High sensitivity D.Small volume E.Good reliability
F. Good spectrum characteristic
(3) Type: MJ5516
(4) Principal composition:CdS ,CdSe ,Epoxy resin , Ceramiic brse ,Nickel plating copper wire.
Part NO | Light Resistance 10Lux (KΩ) | Dark Resistance (MΩ) | Power Dissispstio n 25℃(m W ) | Impresse d Voltage DC (V ) |
Tamp (℃) | |
Operation | Storage | |||||
MJ5516 | 5~10 | 0.6 | 90 | 150 | -20~+70 | -30~+80 |
Explanation: Max power consumption:Maximum power at the environmental TEMPERATURE 25℃
Max external voitage :Maximum voitage to be continuously given to component in the dark.
3 ,Test method
1,Light resistance: Irradiate by400-600Lux Light for two hours ,then,Test with 10Lux under standard light source A(as color temperature 2856k ).
(2) ,Dark resistance,Refer to resistance value ten seconds after the 10Lux light is shut up .
(3) ,value is the standard value under 10Lux and 100Lux.R10,R100 are the resistance under 10Lux and 100Lux respectively.
(4) , Lead wire bending: Carries on to the lead wire willfully curving, the non-discovery lead wire has breaks off or the damage phenomenon.
(5) , Vibration: Places on the vibrator the photoresistance, vibrates for two hours, has the damage phenomenon without the discovery.
(6) , Pressure resistance: Dark condition under adds on 200V in the photoresistance both sides the DC voltage, does not have any abnormal phenomenon.
(7) ,The moisture is thermostable: When the humidity is 75 temperatures for 70℃ the work, its resistance rate of change is smaller than ±10%. when the humidity 75 temperatures for 80℃ the memory, its resistance rate of Bears the impact: Puts in 80℃ , for 4 hours the photoresistance, latter change is smaller than ±10%.
(8) puts in again 25℃ , for 2 hours, puts in again - 30℃ ,for 4 hours,
(9) around its photoresistance puts in the resistance number rate of change is smaller than ±10%.














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