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Description
| 1.IGBT is a functional integration of Power MOSFETand BJT devices in monolithic form
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2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
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3. All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly.
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Feature | 1). Square RBSOA |
2). Low Saturation Voltage | |
3). Overcurrent Limiting Function (~3 Times Rated Current) | |
4). IGBT is three-terminal power semiconductor device | |
5). High Frequency Operation | |
Application | 1). AC Drive inverter |
2). Servo control | |
3). UPS, Uninterruptible Power Supply | |
4). Welding Power Supplies |





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