High Efficiency 28%~32% Triple Junction Gallium Arsenide Solar Cell (4*8cm Laminate) Space solar cell
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- Supplier: Shanghai Gooline Network Technology Co. Ltd.
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Product Overview
Description
4cm*8cm Satellite-grade High-efficiency Triple-junction GaAs Cell
Product Details
The gallium arsenide cell for satellite solar panels relies on aerospace power supply products. Its conversion efficiency is 28-32%, the thickness of the module is less than 1 mm, and it has good high energy density and special environmental tolerance.
Electrical properties under standard test conditions: (AM1.5, 1000W/m2, 25℃)
Features
The triple-junction GaAs solar cell uses germanium as the substrate, and is formed by three N/P sub-cells connected in series through tunneling junctions, with high efficiency and strong radiation resistance. .
Application Field
Low-orbit vehicles, medium-orbit vehicles, high-orbit vehicles (nano-satellites, small satellites, commercial satellites, large satellites, drones, etc.)
Basic Data
Material: GaInP/InGaAs/Ge Triple Junction Solar Cell
Size:(80.15±0.05)mm *(40.15±0.05)mm
Area: 30.15 square centimetre
Thickness: 0.36±0.02mm
Weight:(125±12)mg/square centimetre
Anti-reflection coating: TiOx/Al2O3
Cover glass: KFB120
Cover sheet thickness: 120±20 μm
Interconnect Sheet Material: Silver / Kovar Silver Plated
Interconnect thickness: 20/25μm
Electrical Performance Data (AM0, 1SUN, 1353w/metre, 25℃)
Average open circuit voltage Voc (mV): 2740
Average short-circuit current density Joc (mA/square centimetre): 17.4
Maximum power voltage Vm (mV): 2430
Maximum power current density Joc (mA/square centimetre): 16.7
Average conversion efficiency ηbare: 30%
Fill Factor: 0.850
Irradiation Intensity:(AM0,1SUN,1353w/metre,25℃)
Irradiation intensity 1*1014e/square centimetre 5*1014e/square centimetre 1*1015e/square centimetre
Im/Imo 0.99 0.97 0.94
Vm/Vmo 0.96 0.93 0.92
Pm/Pmo 0.95 0.90 0.86
Design Parameters
Voltage Vl (mV) 2350; Average current Ll ave (mA) 500; Minimum current Ll min (mA) 480
Diode Protection
Vforward(620mA) ≤1.0V ; Ireverse(4.0V) ≤50μA
Other Parameters
Absorption coefficient ≤0.92 ; Bearing tensile force ≥0.83N/mm2
Temperature Coefficient
Irradiation Intensity BOL 1MeV,5*1014e/cm2 1MeV,1*1015e/cm2
Jsc(μA/cm2/C) 11.0 10.0 13.0
Voc(mV/ C) -5.9 -6.1 -6.3
Jm(μA/cm2/C) 9.0 9.5 15.0
Vm(mV/ C) -6.0 -6.2 -6.5
Company Profile
Company website:https://www.gaas.fullsuns.com/
We are Shanghai fullsun Energy Technology Co., Ltd. from China, established in 2015, and our business scope includes energy technology, information technology, computer, network technology and so on.
Since its inception, the company has always been committed to promoting innovation and development in the field of energy. In energy technology, we focus on the research, development and application of efficient and clean energy solutions, including but not limited to new solar technologies, optimisation of energy storage systems and intelligent energy management. Through continuous technological innovation and practical exploration, we endeavour to provide society with a more sustainable and stable energy supply.
In the future, Shanghai fullsun Energy Technology Co., Ltd. will continue to uphold the concept of innovation, cooperation and win-win situation, and constantly expand the business field, improve the technical strength, in order to promote the progress of energy science and technology and the sustainable development of society to contribute. We look forward to working with friends from all walks of life to create a better future!
Appliance
Delivery and shippin
We accept FOB ,CFR,CIF and so on,so you can choose the one which is themost convenient for you.
Shipping:By air;By sea;By express!
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