Single Crystal Gallium Arsenide Wafer GaAs Wafer

Crystal Materials

Single Crystal Gallium Arsenide, VGF / LECgrown,

Crystal Orientation

(1 0 0) / (1 1 1)

Dopant

Undoped / Zn

Si / Te

Diameter

50.8 ± 0.25mm / 76.2± 0.25mm / 100.0 ± 0.4mm

Thickness

325 ± 25um / 550 ± 25um / 625 ± 25um

Orientation

( 100 ) α ⁰ ±β ⁰, off angle α and accuracy β upon request

Resistivity

(1-30)x10 ⁷ Ω.cm

(1-10)x10 ^-3 Ω.cm

Mobility

≥ 5000 cm² / V·sec

N / A

Carrier Concentration

N / A

(0.1-3.0)×10 ¹⁸ /cm³

Etch Pit Density

≤ 5·10 ³cm^-2 /7·10 ⁴cm^-2

≤ 5·10² cm^-2

Orientation(OF) Flat, EJ / US

(0-1-1)±0.5deg, 16 ±1.0mm /22±1.0mm/32.5±1.0mm

Identification(IF) Flat, EJ / US

(0-1 1) )±5.0 deg, 8 ±1.0mm / 11±1.0mm/ 18±1.0mm

Front Side Surface

Polished in Epi-ready Prime grade,

Backside Surface

Polished / Lapping or Etched,

Packaging

N2 filled , cassette / fluoroware, 25pcs /single piece,