multi crystalline silicon solar cell conductive silver paste

Product Overview

Description

MGD series paste is a front electrode for mono and multi-crystalline silicon solar cell wafers. It easily penetrates the anti-reflective (SiNx:H or TiO2-x) layer during the firing process and provides low contact resistance. Ag Paste can be co-fired with commercially available backside Al and Ag-Al Pastes.

These Silver Metallization Pastes are customizable to your process, thus increasing efficiency and fill factor while providing wider processing windows.

The MGD front side Ag Pastes are ideal for lightly-doped emitter designs and optimized for high throughput processing to deliver excellent aspect ratios and fine line resolution. For back side Silver Paste applications, the new lead-free Ag Paste significantly lowers material consumption due to high coverage and excellent initial and soldered age adhesion.
MGD series paste is a front electrode for mono and multi-crystalline silicon solar cell wafers. It easily penetrates the anti-reflective (SiNx:H or TiO2-x) layer during the firing process and provides low contact resistance. Ag Paste can be co-fired with commercially available backside Al and Ag-Al Pastes.

Front Side Ag Paste Properties:

Capture higher efficiencies and wider processing window
Achieve a higher aspect ratio
Excellent fine line resolution
Low contact resistance on lightly doped emitter
Cd free
Pb free available
Applicable to a wide range of sheet emitter wafers
Back Side Ag Paste Properties:

Increased adhesion
Co-firable with back Aluminum and front Silver pastes
Greater peak adhesion strength
Increased paste coverage with superior results provides a high quality, cost effective solution
Customized Ag Paste Solutions.

Solids Content	90~93%
Viscosity(Pa·S)(Brookfield HBT,25°C,10rpm)	200-350
Fineness	<10μm
Screen(BOPP stainless steel)	400/18mesh
Drying	250~300°C/1min      infrared stove,250~300°C/3min
Peak Temperature	780~830°C
Dried Thickness	22±3μm
Fired Thickness	15±2μm
Adhesion(N)	>3N
(220°C,62Sn/36Pb/2Ag)solderability	>95%
(220°C,62Sn/36Pb/2Ag)weldability	10Seconds
Photoelectricity Conversion Efficiency	Single crystal silicon, average conversion efficiency≥19.3 Polysilicon, average conversion efficiency ≥17.8