CMP Slurry for Sapphire Wafer Polishing
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Silicon Oxide Slurry
Silicon oxide slurries are achieved with silicon dioxide particles fully dispersed in the liquid with the available sizes as follows:
The available size is from 20nm to 140nm.
The technical data of SiO2 slurry is as below
Appearance:Milk white liquid
pH value: 10±0.5
Specific gravity(20℃): 1.25-1.30
Viscosity(20℃): less than 10 c.p
2. Chemical composition
(1) Good polishing effect: less impurity and contamination on the polishing surface, easily to clean, high surface finishing, low surface roughness, no scratch;
(2) Easily to use: suitable for general polishing process, and can be directly used or use after diluted with deionized water;
(3) High removal rate: adopt advanced CMP technology for super-hard materials, to improve the polishing efficiency and save processing time.
Lapping and Polishing SiC, sapphire substrate wafer, etc.
4. Operating requirements
(1) Directly use
(2) Mixture ratio of suspension and deionized water is 1:1-1:5.
5. Package: 20Kg/ barrel
(1) Storage condition: Proper temperature 5°C-30°C, avoid solarization
(2) Storage time: half year