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Product Description
1. Durable absorbers and passive Q-switch in the spectral range from 1064 to 1440 nm.
2. Absorbs in high ground-state absorption cross section and negligible excited-state absorption around the absorption peak at about 1300 nm.
3. Grown by the Czochralski method.
4. Applied for a variety of active media such as Nd:YAG, Nd:YAP, Nd:KGW, Nd:YVO4 to achieve compact and good-performance passive Q-switching lasers.
Features
Extremely high ground state absorption
Negligible excited state absorption
High contrast of Q-switch
Good optical, mechanical, and thermal properties
UV resistant and high High damage threshold(>500MW/cm2)
Applications
Q-switching and model-locking for Nd:YAG lasers
Q-switching and model-locking for Nd:YAP lasers
Q-switching and model-locking for Nd:KGW lasers
Q-switching and model-locking for Nd:YVO4 lasers

Parameters
Property | Value |
Chemical formula | V3+:Y3Al5O12 |
Crystal structure | cubic - la3d |
Orientation | <100> <+/-0.5° |
Transmittance | 30%-97% |
Optical density | 0.1-0.8 |
Specifications
Property | Value |
Atomic transition structure | Two-level system |
Recovery time | 5~22 ×10-22 s |
Concentrations | (0.05~0.35) wt% |
Absorption cross-section | 7.3×10-18 cm2 (@ 1340 nm) |
Emission bandwidth | 1000-1450 nm |
Central absorption wavelength | 1300 nm |
Coatings | Standard coating is AR with R < 0.2% (@1340 nm) |
Polishing Specifications
Property | Value |
Orientation Tolerence | < 0.5° |
Thickness/Diameter Tolerance | ±0.05 mm |
Surface Flatness | <λ/8@632 nm |
Wavefront Distortion | <λ/4@632 nm |
Surface Quality | 10/5 |
Parallel | 30″ |
Perpendicular | 15′ |
Clear Aperture | >90% |
Chamfer | <0.2×45° |






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