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In order to obtain good quality of Ti Sapphire crystals, the Ti3+ doping concentration has to be kept fairly low (e.g. 0.15% or 0.25%). Therefore limited pump absorption usually enforces the use of a crystal length of several millimeters, which in combination with the small pump spot size (for high pump intensity) means that a rather high pump brightness is required.Fortunately, Sapphire has also an excellent thermal conductivity, alleviating thermal effects even for high laser power.

Features of diode laser pumped Titanium doped Sapphire Crystal
Ø Large gain-bandwidth
Ø Very large emission bandwidth
Ø Excellent thermal conductivity
Ø Short excited-state lifetime (3.2 μs)
Ø High saturation power
Ø Relatively high laser cross-sections
Ø High damage threshold
Ø Strong Kerr effect
Ø Wide possible pump wavelengths
Applications of diode laser pumped Titanium doped Sapphire Crystal
Ø Femtosecond pulse lasers
Ø High repetition rate oscillators
Ø Chirped-pulse laser amplifiers
Ø Multi-pass amplifiers
Ø Regenerative amplifiers
Ø Wavelength tunable CW lasers
Ø Pulsed X-ray generation
Ø Thin disk oscillator
Ø Petawatt laser systems
Parameters of diode laser pumped Titanium doped Sapphire Crystal
Property | Value |
Chemical formula | Ti3+ Al2O3 |
Crystal structure | hexagonal |
Orientation | A-Axis within 5°,E-vector parallel to C-Axis |
Mass density | 3.98 g/cm3 |
Moh hardness | 9 |
Young's modulus | 335 GPa |
Tensile strength | 400 MPa |
Melting point | 2040 °C |
Thermal conductivity | 33 W / (m K) |
Thermal expansion coefficient | ≈ 5 × 10-6K-1 |
Thermal shock resistance parameter | 790 W/m |
Refractive index at 633 nm | 1.76 |
Temperature dependence of refractive index | 13 × 10-6K-1 |
Ti density for 0.1% at. doping | 4.56 × 1019 cm-3 |
Concentrations | (0.05~0.35) wt% |
End Configuration | Flat/Flat or Brewster/Brewster ends |
Emission cross section at 790 nm (polarization parallel to the c axis) | 41 × 10-20 cm2 |
Coatings | Standard coating is AR with R < 5.0% each face @532 nm and R < 0.5% each face, from 650 nm to 850 nm. Custom coatings supported. |
Polishing Specification of diode laser pumped Titanium doped Sapphire Crystal
Property | Value |
Orientation Tolerence | < 0.5° |
Thickness/Diameter Tolerance | ±0.05 mm |
Surface Flatness | <λ/8@632 nm |
Wavefront Distortion | <λ/4@632 nm |
Surface Quality | 10/5 |
Parallel | 30 ″ |
Perpendicular | 15 ′ |
Clear Aperture | >90% |
Chammfer | <0.2×45° |
Maximum dimensions | dia 150mm |
Standard products of diode laser pumped Titanium doped Sapphire Crystal
Aperture dimension/mm | Length/mm | End surface | Coatings | FOM |
6 | 5 | Brewster Cut | - | >120 |
10 | >150 | |||
15 | >150 | |||
20 | >180 | |||
5 | Right-angle Cut | (R<1%)@532 nm + (R<0.3%)780-820 nm | >120 | |
10 | >150 | |||
15 | >150 | |||
20 | >180 | |||
6x6 | 5 | Brewster Cut | - | >120 |
10 | >150 | |||
15 | >150 | |||
20 | >180 | |||
5 | Right-angle Cut | (R<1%)@532 nm + (R<0.3%)780-820 nm | >120 | |
10 | >150 | |||
15 | >150 | |||
20 | >180 |
Absorption Spectrum of diode laser pumped Titanium doped Sapphire Crystal



Q1: Can I have samples to test?
A: Yes,we are pleased to supply samples to test and check quality,mixed sample order is available.
Q2: Do you have any MOQ limited? A: Our MOQ: 1pcs Q3: What’s the lead time?
A: Sample :2-3 days.Mass production: 15-20 days.
Q4:How do you ship the goods and how long does it take?
A: We usually ship goods by UPS,FEDEX,TNT. It usually takes 3-5 days to arrive.
Q5: Do you offer guarantee for your products?
A: After test them if not pass test,you can return the goods at any time, we will re-offer you again and also bear shipping fee.
Q6: Do you accept OEM?
A: We have our own brand-metalaser. OEM is also acceptable.

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