Hot sale Ti Sapphire Crystal for high power laser pointer

Share on (60680657426):


Price:

Quantity:


Product Overview

Description


Ti_02.jpg


 


Ti Sapphire (Titanium doped Sapphire, Al2O3 Ti3+) has a wide range of emission band from 660 to 1050 nm, which facilitates a variety of existing and potential applications, such as tunable continuous-wave lasers, mode-locked oscillators, chirp-pulse amplifiers, thin disk oscillators/amplifiers and lidars.Moreover, the absorption band of Ti Sapphire is centered at 490 nm, ranging from 400 to 650 nm, which makes it suitable for pump sources of many different lasers, for example, argon ion, frequency doubled Nd YAG (Nd YLF), and copper vapor lasers.Because of 3.2 μs fluorescence lifetime, Ti Sapphire crystals can be effectively pumped by flash lamps in high-power laser systems.


In order to obtain good quality of Ti Sapphire crystals, the Ti3+ doping concentration has to be kept fairly low (e.g. 0.15% or 0.25%). Therefore limited pump absorption usually enforces the use of a crystal length of several millimeters, which in combination with the small pump spot size (for high pump intensity) means that a rather high pump brightness is required.Fortunately, Sapphire has also an excellent thermal conductivity, alleviating thermal effects even for high laser power.


Ti_04.jpg


Features of diode laser pumped Titanium doped Sapphire Crystal


Ø  Large gain-bandwidth


Ø  Very large emission bandwidth


Ø  Excellent thermal conductivity


Ø  Short excited-state lifetime (3.2 μs)


Ø  High saturation power


Ø  Relatively high laser cross-sections


Ø  High damage threshold


Ø  Strong Kerr effect


Ø  Wide possible pump wavelengths 


Applications of diode laser pumped Titanium doped Sapphire Crystal


Ø  Femtosecond pulse lasers 


Ø  High repetition rate oscillators 


Ø  Chirped-pulse laser amplifiers 


Ø  Multi-pass amplifiers 


Ø  Regenerative amplifiers


Ø  Wavelength tunable CW lasers 


Ø  Pulsed X-ray generation


Ø  Thin disk oscillator


Ø  Petawatt laser systems


 Parameters of diode laser pumped Titanium doped Sapphire Crystal


















































































Property



Value



Chemical formula 



Ti3+ Al2O3



Crystal structure



hexagonal



Orientation



A-Axis within 5°,E-vector parallel to C-Axis



Mass density 



3.98 g/cm3



Moh hardness



9



Young's modulus



335 GPa



Tensile strength



400 MPa



Melting point



2040 °C



Thermal conductivity



33 W / (m K)



Thermal expansion coefficient 



≈ 5 × 10-6K-1



Thermal shock resistance parameter



790 W/m



Refractive index at 633 nm



1.76



Temperature dependence of refractive index 



13 × 10-6K-1



Ti density for 0.1% at. doping 



4.56 × 1019 cm-3



Concentrations



(0.05~0.35) wt%



End Configuration



Flat/Flat or Brewster/Brewster ends



Emission cross section at 790 nm (polarization parallel to the c axis)



41 × 10-20 cm2



Coatings



Standard coating is AR with R < 5.0% each face @532 nm and R < 0.5% each face, from 650 nm to 850 nm. Custom coatings supported.



 


Polishing Specification of diode laser pumped Titanium doped Sapphire Crystal


















































Property



Value



Orientation Tolerence



< 0.5°



Thickness/Diameter Tolerance



±0.05 mm



Surface Flatness



<λ/8@632 nm



Wavefront Distortion



<λ/4@632 nm



Surface Quality



10/5



Parallel



30 ″



Perpendicular



15 ′



Clear Aperture



>90%



Chammfer



<0.2×45°



Maximum dimensions



dia 150mm



Standard products of diode laser pumped Titanium doped Sapphire Crystal























































































Aperture dimension/mm



Length/mm



End surface



Coatings



FOM



6



5



Brewster Cut



-



>120



10



>150



15



>150



20



>180



5



Right-angle Cut



(R<1%)@532 nm + (R<0.3%)780-820 nm



>120



10



>150



15



>150



20



>180



6x6



5



Brewster Cut



-



>120



10



>150



15



>150



20



>180



5



Right-angle Cut



(R<1%)@532 nm + (R<0.3%)780-820 nm



>120



10



>150



15



>150



20



>180



 


Absorption Spectrum of diode laser pumped Titanium doped Sapphire Crystal









 



 


Ti_05.jpgTi_06.jpgTi_07.jpg


 


 


 


Ti_11_01.jpgTi_11_02.jpgTi_11_03.jpgTi_11_04.jpg


Ti_11_05.jpgTi_11_06.jpgTi_11_07.jpgTi_11_08.jpg


Q1: Can I have samples to test?


A: Yes,we are pleased to supply samples to test and check quality,mixed sample order is available.


Q2: Do you have any MOQ limited? A: Our MOQ: 1pcs Q3: What’s the lead time?


A: Sample :2-3 days.Mass production: 15-20 days.


Q4:How do you ship the goods and how long does it take?


A: We usually ship goods by UPS,FEDEX,TNT. It usually takes 3-5 days to arrive.


Q5: Do you offer guarantee for your products?


A: After test them if not pass test,you can return the goods at any time, we will re-offer you again and also bear shipping fee.


Q6: Do you accept OEM?


A: We have our own brand-metalaser. OEM is also acceptable.


 


Ti_10.jpg


 


 


0.2021 s.