A1237NC280 Asymmetric thyristors 2800V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)M

1237

A

Sinewave,180^o conduction,T_c=55^oC

RMS value of on-state current

I_TRMSM

2555

A

Nominal value

Peak one cycle surge

(non repetitive) current

I_TSM

-

18

KA

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

1.62x10³

KA²s

8.3 msec and 10.0 msec

Latching current

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

1000

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.1

V

I_TM = 2000 A; Duty Cycle £ 0.01%; T_j =125 ^oC

Threshold vlotage

V_T0

1.7

V

Slope resistance

r_T

0.21

mΩ

Critical rate of rise of on-state

current (5, 6)

di/dt

2000

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

-

1

ms

I_TM = 50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

-

20

ms

I_TM = 1000 A; di/dt = 25 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cycle ³ 0.01%

Reverse recovery charge

Q_rr

-

-

mC

I_TM = 1000 A; di/dt = 25 A/ms;

V_R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

-

-

K/KW

Double sided cooled

Single sided cooled

Thermal resistamce - case to heatsink

R_{Q (c-s)}

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to heatsink

R_{Q (j-s)}

24

48

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

19

26

kN

Weight

W

510

g

About

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1