Mitsubishi igbt 200a 600v CM100DU 12F

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Price:RUB 1,926.56

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Product Overview

Description





Description
1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form
2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
3. All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly.



Feature
1. Square RBSOA
2. Low Saturation Voltage
3. Overcurrent Limiting Function (~3 Times Rated Current)
4. IGBT is three-terminal power semiconductor device
5. High Frequency Operation


Application
1. AC Drive inverter
2. Motion/Servo Control
3. UPS, Uninterruptible Power Supply
4. Welding Power Supplies
Detailed Images
Mi't'su'bi'shi igbt module
Features
·Low Driver Power.
·Low VCE(sat).
·Discrete Super-Fast Recovery.
·ree-Wheel Diode.
·High Frequency Operation.
·Isolated Baseplate for Easy.
·Heat Sinking.
Application 
1.AC Motor Control.
2.Motion/Servo Control
3.UPS
4.Welding Power SUpplies.
0.4218 s.