Etching Resist Ink For PCB Circuit Line Track
- Category: >>>
- Supplier: Dongguan City Lan-Bang Electronic Metal Materials Co. Ltd.
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Product Overview
Description
Product Description
Specification
Viscosity | 280 Pas |
Adhesive | 100/100, 3M Test |
Storing Temperature | 22 Degrees |
Shelf Life | 6 Months |
Packing & Delivery
To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient packaging services will be provided.
Company Profile
B: Operation Procedure
(1)Pre-treatment of substrate
To treat the substrate with scrubbing-machine：
Acid treatment→Polish-brush→Washing→Drying→Dust removing
（2）Screen printing
Screen mesh: 77~100T screen mesh( sprayable)
（3）Pre-drying
The first side: 75℃±5℃×10~15 minutes
The second side: 75℃±5℃×15~20 minutes.
Both sides: 75℃±5℃×20~25 minutes.
（4）
Exposure
Exposure energy: 100～180 mj/C㎡, be subject to: 7-9 steps of residual film out of 21-step sensitivity guide.
（5）
Developing
Composition of developing solution: 1% of Na2CO3 solution;
Temperature of developing solution: 30±2℃
Developing time: 40-60 seconds;
Developing spraying pressure: 1.8-2.2kg/c㎡；
Washing pressure after developing: 1.8-2.2kg/c㎡；
Washing time after developing: 20-30 seconds.
（6）
Etching resisting
Resistant to acid etchant
（7）Stripping
Stripping solution: ５％ of NaOH solution,
Operating temperature: ５０±２℃.
Stripping time: 2-3 minutes
Matters need attention：
1. To fully stir till it’s well-proportioned before using it.
2. Parameters above is only for reference, the specific operation should be subject to samples.
(1)Pre-treatment of substrate
To treat the substrate with scrubbing-machine：
Acid treatment→Polish-brush→Washing→Drying→Dust removing
（2）Screen printing
Screen mesh: 77~100T screen mesh( sprayable)
（3）Pre-drying
The first side: 75℃±5℃×10~15 minutes
The second side: 75℃±5℃×15~20 minutes.
Both sides: 75℃±5℃×20~25 minutes.
（4）
Exposure
Exposure energy: 100～180 mj/C㎡, be subject to: 7-9 steps of residual film out of 21-step sensitivity guide.
（5）
Developing
Composition of developing solution: 1% of Na2CO3 solution;
Temperature of developing solution: 30±2℃
Developing time: 40-60 seconds;
Developing spraying pressure: 1.8-2.2kg/c㎡；
Washing pressure after developing: 1.8-2.2kg/c㎡；
Washing time after developing: 20-30 seconds.
（6）
Etching resisting
Resistant to acid etchant
（7）Stripping
Stripping solution: ５％ of NaOH solution,
Operating temperature: ５０±２℃.
Stripping time: 2-3 minutes
Matters need attention：
1. To fully stir till it’s well-proportioned before using it.
2. Parameters above is only for reference, the specific operation should be subject to samples.
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