Good quality NPN 140V 16A TO-3 Transistors 2N3773
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RA60H1317M1A RA60H1317M1 RA60H1317M RA60H1317 136 174MHz 60W 12.5V RF MOSFET Amplifier Module H2M
- Category: Active Components >>>
- Supplier: Shenzhen Jowin Technology Co. Ltd.
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Product Overview
Description
RA60H1317M1A RF MOSFET MODULE
RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of theenhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>45% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 136-174MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 67 x 18 x 9.9 mm RoHS COMPLIANCE • RA60H1317M1A is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of theenhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>45% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 136-174MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 67 x 18 x 9.9 mm RoHS COMPLIANCE • RA60H1317M1A is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
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