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HT-silicon carbide/SIC crucibles for melting
Features of silicon carbide crucible:
a)Excellent Thermal Shock Characteristics
b)Corrosion Resistance
c)As Cast Tight Dimensional Tolerances
d)High Creep Resistance
e)Superior Wear Resistance
f)Maximum Use Temperature to 1600 °C
g)High temperature tolerance, high thermal conductivity, low coefficient of thermal expansion, oxidation resistance, thermal shock resistance, long application life.
Benefits:
a)Superior Oxidation Resistance
b)Improved Performance
c)Lowered Cost Burden
d)Longer Life Between Replacement/Rebuilds
e)Allows Lower Weight
f)Very High Thermal Conductivity
1.Thermal stability: We make special design to assure the quality accordig to the instant temperature changing working condition.
2.Corrosion resistance: Precise design extends the ability of corrision resistance of the crucible.
3.Impulsion resistance: Duratight graphite crucible can stand very strong heat impulsion, so it can be freely used in any technic process.
4.Acid resistance: Impregnation of special stuff can improve the quality of the crucible and its outstand in the acid resistance. As a result, it can prolong the work life of the graphite crucible.
5.Fine thermal conductivity: High content of fixed carbon ensures the good thermal conductivity, shorten the dissolving time and lower the cost of the oil and other energy obviously.
6.Control of metallic pollution : Strict control of the contents assures that there is no pollution to the metal during dissolving.
7.Quality stability: High-pressure manufacturing method and quality control system can pledge the quality stability better.
Chemical Composition of sta silicon crucibles
C % | SiC% | AL2O3 % | SIO2% |
45%-50% | 20%-30% | 10%-12% | 15-25% |
The specification of sta silicon crucibles:
Content of C | ≥ 45 |
Density(g/cm3) | ≥ 1.85 |
Apparent porosity (%) | ≤ 21 |
pressive strength(Mpa) | ≥ 25 |
refractability | ≥ 1400C(melting alumina) ≥ 1550C(melting copper) |
rupture strength(Mpa) | 9-12 |
diathermancy | 3.0-3.7×10-6/C |
C | 45-50% |
Sic | 20-30% |
Sio2 | 15-25% |
Si | 3-8% |
A12O3 | 10-12% |
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